Factory Lead Time  

13 Weeks

Contact Plating  

Copper, Silver, Tin

Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

DirectFET™ Isometric SQ

Number of Pins  

6

Transistor Element Material  

SILICON

Drive Voltage (Max Rds On, Min Rds On)  

4.5V 10V

Current - Continuous Drain (Id) @ 25℃  

19A Ta 74A Tc

Turn Off Delay Time  

11 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

2.1V @ 35μA

Number of Elements  

1

Power Dissipation (Max)  

2.1W Ta 32W Tc

Published  

2005

Operating Temperature  

-40°C~150°C TJ

Packaging  

Tape & Reel (TR)

Series  

HEXFET®

JESD-609 Code  

e1

Part Status  

Last Time Buy

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Resistance  

3.7MOhm

Terminal Finish  

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Position  

BOTTOM

Terminal Form  

NO LEAD

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

JESD-30 Code  

R-XBCC-N2

Qualification Status  

Not Qualified

Configuration  

SINGLE WITH BUILT-IN DIODE

Number of Channels  

1

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

2.1W

Case Connection  

DRAIN

Turn On Delay Time  

8.7 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

3.7m Ω @ 19A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1590pF @ 13V

Gate Charge (Qg) (Max) @ Vgs  

17nC @ 4.5V

Rise Time  

19ns

Vgs (Max)  

±16V

Fall Time (Typ)  

5.5 ns

Continuous Drain Current (ID)  

19A

Gate to Source Voltage (Vgs)  

16V

Drain Current-Max (Abs) (ID)  

74A

Drain to Source Breakdown Voltage  

25V

Avalanche Energy Rating (Eas)  

32 mJ

Max Junction Temperature (Tj)  

150°C

Height  

700μm

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free